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Reference Number: AA-01756// Views: AA-01756// Created: 2019-11-07 18:28:12// Last Updated: 2023-04-11 14:39:42 HowTo How To Simulate IGBT-Level Faults in a Two-Level Inverter Using eHS Inverter faulting at the IGBT-Level can be simulated by using the Scenarios feature in eHS to control the magnitude of resistances placed throughout the circuit model. The attached file, partially shown in the image below, is an example circuit model written using Simscape Power Systems. A two-level, three-phase inverter model is constructed using Universal Bridge blocks set to Single Phase mode. The resistors shown in orange are configured with a very high resistance by default (1MOhm) and can individually be set to very low resistance values (1uOhm) to short one single IGBT as if it were held closed. Meanwhile, the red resistors are configured with a very low resistance by default (1uOhm) and can individually be set to very high resistance values (1MOhm) to simulate the corresponding IGBT being held open. The chart below summarizes the way to configure the resistances for each IGBT mode of operation: The following resources provide additional information on eHS Scenarios and how to configure them. If using RT-LAB with the OPAL-RT hardware platform, see the eHS User Guide online or installed here: C:\OPAL-RT\eFPGAsim\v2.0.0.53\Docs\pdf\OPAL-RT eHS User Guide.pdf If using the Power Electronics Add-On for NI VeriStand with the National Instruments hardware platform, please refer to the online PNIVS User Documentation, and more specifically to the How to Use the Scenarios Feature section.
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